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APPLICATIONS. z High Collector Current. ORDERING INFORMATION. Type No. IC=-800mA, IB=B -80mA VCE=-10V, IC= -50mA f=30MHz. 100. -0.5 -1.2. Output capacitance Base-emitter voltage. Cob VBEF.


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z High Collector Current. ORDERING INFORMATION.


Living in English: Law and Order. Copyright 2007. This eBook is produced and distributed by Red River Press Inc. All rights reserved. The students may follow up this activity by making their own list of law and order words and asking other classmates which category they would place them in.


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Datasheet search site | www.alldatasheet.com | Value 50 50 50
50N03. Power-Transistor. Features • Fast switching MOSFET for SMPS • Optimized technology for DC/DC converters • Qualified according to JEDEC1) for target applications • N-channel, logic level • Excellent gate charge x R DS(on) product (FOM) • Very low on-resistance R DS(on) • Avalanche rated...


Hayao Miyazaki & Studio Ghibli - Best Album - For Easy Piano
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this is a complete item this is an incomplete item @mentions, #refs, links, forma ing, and tags supported list syntax required (any unordered or ordered list supported). Ta b L e s. You can create tables by assembling a list of words and dividing them with hyphens - (for the rst row), and then separating each...


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-50 0 50 100 150. TJ, Junction Temperature [oC]. 200. Figure 7. Breakdown Voltage Variation vs Temperature. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications.


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3. Derate linearly above 50oC by 5.5mW/oC. 4. In the test circuit, there is no external capacitor applied to pin 7. However, when the device is plugged into a test socket, there is usually a very small but finite stray capacitance present, of the order of 5pF.


RFG50N06, RFP50N06, RF1S50N06SM
50A, 60V, 0.022 Ohm, N-Channel Power MOSFETs. These N-Channel power MOSFETs are manufactured using the MegaFET process. This process, which uses feature sizes approaching those of LSI integrated circuits gives optimum utilization of silicon, resulting in outstanding performance.